1N5822
vs
JANTXV1N5822
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Transferred
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
| Package Description |
HERMETIC SEALED, GLASS, B PACKAGE-2
|
HERMETIC SEALED PACKAGE-2
|
| Reach Compliance Code |
compliant
|
unknown
|
| Factory Lead Time |
24 Weeks
|
|
| Samacsys Manufacturer |
Microchip
|
Microsemi Corporation
|
| Application |
GENERAL PURPOSE
|
GENERAL PURPOSE
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE
|
| Diode Element Material |
SILICON
|
SILICON
|
| Diode Type |
RECTIFIER DIODE
|
RECTIFIER DIODE
|
| Forward Voltage-Max (VF) |
0.7 V
|
|
| JESD-30 Code |
O-LALF-W2
|
O-XALF-W2
|
| JESD-609 Code |
e0
|
e0
|
| Non-rep Pk Forward Current-Max |
80 A
|
80 A
|
| Number of Elements |
1
|
1
|
| Number of Phases |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Temperature-Max |
125 °C
|
|
| Operating Temperature-Min |
-65 °C
|
|
| Output Current-Max |
3 A
|
3 A
|
| Package Body Material |
GLASS
|
UNSPECIFIED
|
| Package Shape |
ROUND
|
ROUND
|
| Package Style |
LONG FORM
|
LONG FORM
|
| Rep Pk Reverse Voltage-Max |
40 V
|
40 V
|
| Reverse Current-Max |
100 µA
|
|
| Surface Mount |
NO
|
NO
|
| Technology |
SCHOTTKY
|
SCHOTTKY
|
| Terminal Finish |
Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
|
TIN LEAD
|
| Terminal Form |
WIRE
|
WIRE
|
| Terminal Position |
AXIAL
|
AXIAL
|
| Base Number Matches |
16
|
2
|
| Pbfree Code |
|
No
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8541.10.00.80
|
| Additional Feature |
|
METALLURGICALLY BONDED
|
| Qualification Status |
|
Not Qualified
|
| Reference Standard |
|
MIL-19500/620E
|
|
|
|
Compare 1N5822 with alternatives
Compare JANTXV1N5822 with alternatives