1N6461 vs P6SMBJ11A_R2_00001 feature comparison

1N6461 Micross Components

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P6SMBJ11A_R2_00001 PanJit Semiconductor

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Part Life Cycle Code Active Active
Ihs Manufacturer MICROSS COMPONENTS PAN JIT INTERNATIONAL INC
Reach Compliance Code unknown not_compliant
Factory Lead Time 15 Weeks
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 5.6 V 12.2 V
Breakdown Voltage-Nom 5.6 V
Case Connection ISOLATED
Clamping Voltage-Max 9 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LALF-W2 R-PDSO-C2
JESD-609 Code e2 e3
Non-rep Peak Rev Power Dis-Max 500 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 175 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material GLASS PLASTIC/EPOXY
Package Shape ROUND RECTANGULAR
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 3 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 5 V 11 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN COPPER TIN
Terminal Form WIRE C BEND
Terminal Position AXIAL DUAL
Base Number Matches 10 1
Pbfree Code Yes
Rohs Code Yes
Package Description R-PDSO-C2
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 14 V
JEDEC-95 Code DO-214AA
Reference Standard UL RECOGNIZED

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