1SS250TE85R vs 1N52A feature comparison

1SS250TE85R Toshiba America Electronic Components

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1N52A New Jersey Semiconductor Products Inc

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Part Life Cycle Code Active Active
Ihs Manufacturer TOSHIBA CORP NEW JERSEY SEMICONDUCTOR PRODUCTS INC
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V 1 V
JESD-30 Code R-PDSO-G3 O-XALF-W2
Non-rep Pk Forward Current-Max 2 A
Number of Elements 1 1
Number of Phases 1 1
Number of Terminals 3 2
Operating Temperature-Max 125 °C 85 °C
Output Current-Max 0.1 A 0.5 A
Package Body Material PLASTIC/EPOXY UNSPECIFIED
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.15 W 0.08 W
Qualification Status Not Qualified
Reverse Current-Max 1 µA 150 µA
Reverse Recovery Time-Max 0.06 µs
Surface Mount YES NO
Terminal Form GULL WING WIRE
Terminal Position DUAL AXIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 1 6
Application GENERAL PURPOSE
Case Connection ISOLATED
Operating Temperature-Min -65 °C
Rep Pk Reverse Voltage-Max 85 V
Reverse Test Voltage 50 V

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