2N7002,215 vs BFW12 feature comparison

2N7002,215 Nexperia

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BFW12 NXP Semiconductors

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer NEXPERIA NXP SEMICONDUCTORS
Part Package Code TO-236
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Date Of Intro 1995-04-01
Samacsys Manufacturer Nexperia
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 60 V 30 V
Drain Current-Max (ID) 0.3 A 0.01 A
Drain-source On Resistance-Max 5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JUNCTION
Feedback Cap-Max (Crss) 10 pF 0.8 pF
JEDEC-95 Code TO-236AB TO-72
JESD-30 Code R-PDSO-G3 O-MBCY-W3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE DEPLETION MODE
Operating Temperature-Max 150 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material PLASTIC/EPOXY METAL
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES NO
Terminal Finish TIN
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING AMPLIFIER
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Package Description CYLINDRICAL, O-MBCY-W3
Case Connection SHIELD
Qualification Status Not Qualified

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