2N7002-T1-GE3 vs VN0606M feature comparison

2N7002-T1-GE3 Vishay Intertechnologies

Buy Now Datasheet

VN0606M Temic Semiconductors

Buy Now Datasheet
Rohs Code Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC TEMIC SEMICONDUCTORS
Package Description SMALL OUTLINE, R-PDSO-G3 CYLINDRICAL, O-PBCY-W3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 6 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 0.115 A 0.39 A
Drain-source On Resistance-Max 7.5 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF 10 pF
JEDEC-95 Code TO-236 TO-237AA
JESD-30 Code R-PDSO-G3 O-PBCY-W3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR ROUND
Package Style SMALL OUTLINE CYLINDRICAL
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES NO
Terminal Finish MATTE TIN
Terminal Form GULL WING WIRE
Terminal Position DUAL BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Additional Feature LOW THRESHOLD
Case Connection DRAIN
Qualification Status Not Qualified

Compare 2N7002-T1-GE3 with alternatives

Compare VN0606M with alternatives