APT20M11JVR
vs
APT20M11JLL
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROCHIP TECHNOLOGY INC
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
43 Weeks, 6 Days
|
43 Weeks
|
| Additional Feature |
HIGH VOLTAGE
|
|
| Avalanche Energy Rating (Eas) |
3600 mJ
|
3600 mJ
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
175 A
|
176 A
|
| Drain-source On Resistance-Max |
0.011 Ω
|
0.011 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PUFM-X4
|
R-PUFM-X4
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
700 A
|
704 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
| Terminal Position |
UPPER
|
UPPER
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
| JESD-609 Code |
|
e1
|
| Power Dissipation-Max (Abs) |
|
735 W
|
| Reference Standard |
|
UL RECOGNIZED
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare APT20M11JVR with alternatives
Compare APT20M11JLL with alternatives