APTCV60TLM45T3G
vs
F3L75R07W2E3B11BOMA1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Active
|
| Ihs Manufacturer |
MICROSEMI CORP
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
ROHS COMPLIANT PACKAGE-32
|
,
|
| Pin Count |
32
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
ISOLATED
|
|
| Collector Current-Max (IC) |
100 A
|
|
| Collector-Emitter Voltage-Max |
600 V
|
|
| Configuration |
COMPLEX
|
|
| Gate-Emitter Voltage-Max |
20 V
|
|
| JESD-30 Code |
R-XUFM-X32
|
|
| Number of Elements |
4
|
|
| Number of Terminals |
32
|
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
UNSPECIFIED
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
250 W
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
UNSPECIFIED
|
|
| Terminal Position |
UPPER
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
POWER CONTROL
|
|
| Transistor Element Material |
SILICON
|
|
| Turn-off Time-Nom (toff) |
310 ns
|
|
| Turn-on Time-Nom (ton) |
170 ns
|
|
| VCEsat-Max |
1.9 V
|
|
| Base Number Matches |
2
|
1
|
| Factory Lead Time |
|
26 Weeks
|
| Samacsys Manufacturer |
|
Infineon
|
|
|
|
Compare APTCV60TLM45T3G with alternatives
Compare F3L75R07W2E3B11BOMA1 with alternatives