APTGT200SK60T3AG
vs
APTGT200DA60TG
feature comparison
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
MICROCHIP TECHNOLOGY INC
|
MICROSEMI CORP
|
Package Description |
ROHS COMPLIANT, SP3, 25 PIN
|
ROHS COMPLIANT, SP4, 12 PIN
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
27 Weeks
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Collector Current-Max (IC) |
290 A
|
290 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
|
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
|
JESD-30 Code |
R-XUFM-X8
|
R-XUFM-X12
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
12
|
Operating Temperature-Max |
175 °C
|
175 °C
|
Package Body Material |
UNSPECIFIED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Form |
UNSPECIFIED
|
UNSPECIFIED
|
Terminal Position |
UPPER
|
UPPER
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
370 ns
|
370 ns
|
Turn-on Time-Nom (ton) |
180 ns
|
180 ns
|
Base Number Matches |
2
|
2
|
Pbfree Code |
|
Yes
|
Pin Count |
|
12
|
Additional Feature |
|
AVALANCHE RATED
|
Gate-Emitter Voltage-Max |
|
20 V
|
JESD-609 Code |
|
e1
|
Moisture Sensitivity Level |
|
1
|
Power Dissipation-Max (Abs) |
|
625 W
|
Terminal Finish |
|
TIN SILVER COPPER
|
VCEsat-Max |
|
1.9 V
|
|
|
|
Compare APTGT200SK60T3AG with alternatives
Compare APTGT200DA60TG with alternatives