AT28C010-12DM/883 vs 28C010TRT4DE-12 feature comparison

AT28C010-12DM/883 Microchip Technology Inc

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28C010TRT4DE-12 Data Device Corporation

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Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC DATA DEVICE CORP
Package Description DIP-32 DIP-32
Reach Compliance Code compliant compliant
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.51 8542.32.00.51
Samacsys Manufacturer Microchip
Access Time-Max 120 ns 120 ns
JESD-30 Code R-GDIP-T32 R-XDIP-T32
JESD-609 Code e0
Length 42.2 mm 40.64 mm
Memory Density 1048576 bit 1048576 bit
Memory IC Type EEPROM EEPROM
Memory Width 8 8
Number of Functions 1 1
Number of Terminals 32 32
Number of Words 131072 words 131072 words
Number of Words Code 128000 128000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 128KX8 128KX8
Package Body Material CERAMIC, GLASS-SEALED UNSPECIFIED
Package Code DIP DIP
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Parallel/Serial PARALLEL PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Programming Voltage 5 V 5 V
Screening Level MIL-STD-883 Class C
Seated Height-Max 5.72 mm 5.715 mm
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 15.24 mm 15.24 mm
Write Cycle Time-Max (tWC) 10 ms 10 ms
Base Number Matches 2 2
Qualification Status Not Qualified
Supply Current-Max 0.05 mA
Total Dose 40k Rad(Si) V

Compare AT28C010-12DM/883 with alternatives

Compare 28C010TRT4DE-12 with alternatives