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BAV99/8,215 vs BAV99/8,235 feature comparison

BAV99/8,215 NXP Semiconductors

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BAV99/8,235 NXP Semiconductors

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS NXP SEMICONDUCTORS
Package Description SOT-23, 3 PIN SOT-23, 3 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Samacsys Manufacturer NXP
Additional Feature LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Application GENERAL PURPOSE GENERAL PURPOSE
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V 1.25 V
JEDEC-95 Code TO-236AB TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Non-rep Pk Forward Current-Max 4 A 4 A
Number of Elements 2 2
Number of Phases 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Output Current-Max 0.215 A 0.215 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Power Dissipation-Max 0.25 W 0.25 W
Reference Standard AEC-Q101 AEC-Q101
Rep Pk Reverse Voltage-Max 100 V 100 V
Reverse Current-Max 0.5 µA 0.5 µA
Reverse Recovery Time-Max 0.006 µs 0.004 µs
Reverse Test Voltage 80 V 80 V
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 2 2
Diodes » Rectifier Diodes
Diodes » Rectifier Diodes

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Compare BAV99/8,235 with alternatives