BAW156,215 vs BAW156 feature comparison

BAW156,215 NXP Semiconductors

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BAW156 Galaxy Microelectronics

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Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer NXP SEMICONDUCTORS CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Part Package Code TO-236
Package Description PLASTIC PACKAGE-3 SOT-23, 3 PIN
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.70
Factory Lead Time 4 Weeks
Additional Feature LOW LEAKAGE CURRENT LOW LEAKAGE CURRENT
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type RECTIFIER DIODE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.25 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3 R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A 4 A
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Output Current-Max 0.16 A 0.16 A
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W 0.25 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 85 V 85 V
Reverse Recovery Time-Max 3 µs 4 µs
Surface Mount YES YES
Terminal Finish TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 2 14
Application FAST RECOVERY
Breakdown Voltage-Min 85 V
Number of Phases 1
Operating Temperature-Min -65 °C
Reference Standard MIL-STD-202
Reverse Current-Max 0.08 µA
Reverse Test Voltage 75 V

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