BFG410W
vs
BFG410WT/R
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
NXP SEMICONDUCTORS
|
NXP SEMICONDUCTORS
|
| Package Description |
PLASTIC PACKAGE-4
|
SMALL OUTLINE, R-PDSO-G4
|
| Pin Count |
4
|
4
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
8541.21.00.75
|
| Additional Feature |
LOW NOISE
|
LOW NOISE
|
| Case Connection |
EMITTER
|
EMITTER
|
| Collector Current-Max (IC) |
0.012 A
|
0.012 A
|
| Collector-Emitter Voltage-Max |
4.5 V
|
4.5 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
50
|
| Highest Frequency Band |
L BAND
|
L BAND
|
| JESD-30 Code |
R-PDSO-G4
|
R-PDSO-G4
|
| JESD-609 Code |
e3
|
e3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
4
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
NPN
|
NPN
|
| Power Dissipation Ambient-Max |
0.054 W
|
0.054 W
|
| Power Dissipation-Max (Abs) |
0.054 W
|
0.054 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
MATTE TIN
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
22000 MHz
|
22000 MHz
|
| Base Number Matches |
4
|
1
|
|
|
|
Compare BFG410W with alternatives
Compare BFG410WT/R with alternatives