BSC043N03MSCGATMA1 vs FDS7068SN3 feature comparison

BSC043N03MSCGATMA1 Infineon Technologies AG

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FDS7068SN3 Fairchild Semiconductor Corporation

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description SMALL OUTLINE, R-PDSO-F8 SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 35 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V 30 V
Drain Current-Max (ID) 17 A 19 A
Drain-source On Resistance-Max 0.0056 Ω 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PDSO-G8
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 348 A 60 A
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Rohs Code No
Part Package Code SOT
Pin Count 8
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 3 W
Qualification Status Not Qualified
Terminal Finish TIN LEAD

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