BSC350N20NSFDATMA1 vs IPB320N20N3GATMA1 feature comparison

BSC350N20NSFDATMA1 Infineon Technologies AG

Buy Now Datasheet

IPB320N20N3GATMA1 Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 18 Weeks 18 Weeks
Samacsys Manufacturer Infineon Infineon
Avalanche Energy Rating (Eas) 97 mJ 190 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 35 A 34 A
Drain-source On Resistance-Max 0.035 Ω 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 8 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 140 A 136 A
Surface Mount YES YES
Terminal Finish Tin (Sn) Tin (Sn)
Terminal Form FLAT GULL WING
Terminal Position DUAL SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Part Package Code D2PAK
Pin Count 4
JEDEC-95 Code TO-263AB
Operating Temperature-Max 175 °C
Qualification Status Not Qualified

Compare BSC350N20NSFDATMA1 with alternatives

Compare IPB320N20N3GATMA1 with alternatives