Findchips: Compare BSP225TRL vs BSP130,115

BSP225TRL vs BSP130,115 feature comparison

Buy Now Datasheet

Buy Now Datasheet

Rohs Code	Yes	Yes
Part Life Cycle Code	Active	Transferred
Ihs Manufacturer	NEXPERIA	NXP SEMICONDUCTORS
Reach Compliance Code	compliant	compliant
ECCN Code	EAR99	EAR99
Date Of Intro	2017-02-01
Additional Feature	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	250 V
Drain Current-Max (ID)	0.225 A	0.3 A
Drain-source On Resistance-Max	15 Ω	8 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	15 pF
JESD-30 Code	R-PDSO-G4	R-PDSO-G4
Number of Elements	1	1
Number of Terminals	4	4
Operating Mode	ENHANCEMENT MODE
Package Body Material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package Shape	RECTANGULAR	RECTANGULAR
Package Style	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Cel)	NOT SPECIFIED	260
Polarity/Channel Type	P-CHANNEL	N-CHANNEL
Surface Mount	YES	YES
Terminal Form	GULL WING	GULL WING
Terminal Position	DUAL	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	30
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Base Number Matches	3	2
Part Package Code		SC-73
Package Description		SMALL OUTLINE, R-PDSO-G4
Pin Count		4
Manufacturer Package Code		SOT223
HTS Code		8541.29.00.75
Case Connection		DRAIN
JESD-609 Code		e3
Moisture Sensitivity Level		1
Operating Temperature-Max		150 °C
Power Dissipation-Max (Abs)		1.5 W
Qualification Status		Not Qualified
Terminal Finish		TIN
	Transistors » Small Signal Field-Effect Transistors	Transistors » Power Field-Effect Transistors