BSS123
vs
BSS123LT1
feature comparison
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
GOOD-ARK ELECTRONICS CO LTD
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
Single
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
0.19 A
|
|
| Drain-source On Resistance-Max |
5 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| Feedback Cap-Max (Crss) |
2 pF
|
|
| JESD-30 Code |
R-PDSO-G3
|
|
| JESD-609 Code |
e3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
0.3 W
|
|
| Power Dissipation-Max (Abs) |
0.3 W
|
0.225 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin (Sn)
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
DUAL
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
25
|
4
|
| Rohs Code |
|
No
|
| Package Description |
|
,
|
| Drain Current-Max (Abs) (ID) |
|
0.17 A
|
|
|
|