BSS123D87Z vs BSS123E6433 feature comparison

BSS123D87Z Texas Instruments

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BSS123E6433 Infineon Technologies AG

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 0.17 A 0.17 A
Drain-source On Resistance-Max 10 Ω 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF 6 pF
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 0.36 W 0.36 W
Power Dissipation-Max (Abs) 0.36 W 0.36 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
Rohs Code Yes
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Reference Standard IEC-68-1; MIL-STD-883

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