FCP11N60
vs
SPP11N60C3XKSA1
feature comparison
Pbfree Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
ONSEMI
|
INFINEON TECHNOLOGIES AG
|
Package Description |
ROHS COMPLIANT PACKAGE-3
|
TO-220, 3 PIN
|
Manufacturer Package Code |
340AT
|
|
Reach Compliance Code |
not_compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
18 Weeks
|
15 Weeks
|
Samacsys Manufacturer |
onsemi
|
Infineon
|
Avalanche Energy Rating (Eas) |
340 mJ
|
340 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
600 V
|
600 V
|
Drain Current-Max (ID) |
11 A
|
11 A
|
Drain-source On Resistance-Max |
0.38 Ω
|
0.38 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
33 A
|
33 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Matte Tin (Sn) - annealed
|
Tin (Sn)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
Transistor Application |
SWITCHING
|
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
1
|
Rohs Code |
|
Yes
|
Additional Feature |
|
AVALANCHE RATED
|
Feedback Cap-Max (Crss) |
|
30 pF
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
125 W
|
Turn-off Time-Max (toff) |
|
79 ns
|
|
|
|
Compare FCP11N60 with alternatives
Compare SPP11N60C3XKSA1 with alternatives