FMH20N60S1
vs
SIHP22N60E-E3
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Not Recommended
|
Active
|
| Ihs Manufacturer |
FUJI ELECTRIC CO LTD
|
VISHAY INTERTECHNOLOGY INC
|
| Part Package Code |
TO-3P(Q
|
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
ROHS COMPLIANT PACKAGE-3
|
| Pin Count |
3
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
FUJI ELECTRIC
|
Vishay
|
| Avalanche Energy Rating (Eas) |
472.2 mJ
|
367 mJ
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
600 V
|
600 V
|
| Drain Current-Max (ID) |
20 A
|
21 A
|
| Drain-source On Resistance-Max |
0.19 Ω
|
0.18 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
60 A
|
56 A
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Additional Feature |
|
AVALANCHE RATED
|
| JEDEC-95 Code |
|
TO-220AB
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
227 W
|
|
|
|
Compare FMH20N60S1 with alternatives
Compare SIHP22N60E-E3 with alternatives