GBPC2506-G vs GBJ2506AB1 feature comparison

GBPC2506-G Comchip Technology Corporation Ltd

Buy Now Datasheet

GBJ2506AB1 Yangzhou Yangjie Electronics Co Ltd

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer COMCHIP TECHNOLOGY CO LTD YANGZHOU YANGJIE ELECTRONICS CO LTD
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.80 8541.10.00.80
Samacsys Manufacturer Comchip Technology
Breakdown Voltage-Min 600 V 600 V
Case Connection ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1 V
JESD-30 Code R-XUFM-D4 R-PSFM-T4
Non-rep Pk Forward Current-Max 350 A 350 A
Number of Elements 4 4
Number of Phases 1 1
Number of Terminals 4 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -55 °C -55 °C
Output Current-Max 25 A 3.5 A
Package Body Material UNSPECIFIED PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Reference Standard UL RECOGNIZED UL RECOGNIZED
Rep Pk Reverse Voltage-Max 600 V 600 V
Surface Mount NO NO
Terminal Form SOLDER LUG THROUGH-HOLE
Terminal Position UPPER SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Package Description R-PSFM-T4

Compare GBPC2506-G with alternatives

Compare GBJ2506AB1 with alternatives