IDT8M612S60CB vs DPS8M612-35B feature comparison

IDT8M612S60CB Integrated Device Technology Inc

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DPS8M612-35B Twilight Technology Inc

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Rohs Code No No
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer INTEGRATED DEVICE TECHNOLOGY INC TWILIGHT TECHNOLOGY INC
Reach Compliance Code not_compliant unknown
ECCN Code 3A001.A.2.C 3A001.A.2.C
HTS Code 8542.32.00.41 8542.32.00.41
Access Time-Max 60 ns 35 ns
Additional Feature TTL COMPATIBLE INPUTS/OUTPUTS
I/O Type COMMON COMMON
JESD-30 Code R-CDMA-T40 R-XDMA-T40
JESD-609 Code e0
Memory Density 524288 bit 524288 bit
Memory IC Type SRAM MODULE SRAM MODULE
Memory Width 16 16
Number of Functions 1 1
Number of Terminals 40 40
Number of Words 32768 words 32768 words
Number of Words Code 32000 32000
Operating Mode ASYNCHRONOUS ASYNCHRONOUS
Operating Temperature-Max 125 °C 125 °C
Operating Temperature-Min -55 °C -55 °C
Organization 32KX16 32KX16
Output Characteristics 3-STATE 3-STATE
Package Body Material CERAMIC, METAL-SEALED COFIRED UNSPECIFIED
Package Code DIP DIP
Package Equivalence Code DIP40,.6 DIP40,.6
Package Shape RECTANGULAR RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Parallel/Serial PARALLEL PARALLEL
Qualification Status Not Qualified Not Qualified
Screening Level MIL-STD-883 Class B (Modified) MIL-STD-883 Class B (Modified)
Standby Current-Max 0.04 A 0.0016 A
Standby Voltage-Min 4.5 V 2 V
Supply Current-Max 0.3 mA 0.33 mA
Supply Voltage-Max (Vsup) 5.5 V 5.5 V
Supply Voltage-Min (Vsup) 4.5 V 4.5 V
Supply Voltage-Nom (Vsup) 5 V 5 V
Surface Mount NO NO
Technology CMOS CMOS
Temperature Grade MILITARY MILITARY
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Pitch 2.54 mm 2.54 mm
Terminal Position DUAL DUAL
Base Number Matches 1 1
Pbfree Code No
Package Description DIP, DIP40,.6
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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