IPB011N04LG vs NP180N04TUJ-E2-AY feature comparison

IPB011N04LG Infineon Technologies AG

Buy Now Datasheet

NP180N04TUJ-E2-AY Renesas Electronics Corporation

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Part Package Code TO-263 MP-25ZT
Package Description SMALL OUTLINE, R-PSSO-G6 SMALL OUTLINE, R-PSSO-G6
Pin Count 7 7
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 525 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 180 A 180 A
Drain-source On Resistance-Max 0.0014 Ω 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G6 R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 1260 A 720 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Manufacturer Package Code PRSS0008DB
Samacsys Manufacturer Renesas Electronics
JEDEC-95 Code TO-263

Compare IPB011N04LG with alternatives

Compare NP180N04TUJ-E2-AY with alternatives