IPB100N04S3-03 vs 934066414127 feature comparison

IPB100N04S3-03 Infineon Technologies AG

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934066414127 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG NXP SEMICONDUCTORS
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Pin Count 4
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Rating (Eas) 898 mJ 419 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 100 A 100 A
Drain-source On Resistance-Max 0.0028 Ω 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-262AA
JESD-30 Code R-PSSO-G2 R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 214 W
Pulsed Drain Current-Max (IDM) 400 A 781 A
Qualification Status Not Qualified
Surface Mount YES NO
Terminal Finish Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Reference Standard AEC-Q101; IEC-60134
Transistor Application SWITCHING

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Compare 934066414127 with alternatives