IPB160N04S3-H2 vs IPB160N04S4-02D feature comparison

IPB160N04S3-H2 Infineon Technologies AG

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IPB160N04S4-02D Infineon Technologies AG

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Part Package Code TO-263 TO-263
Package Description SMALL OUTLINE, R-PSSO-G6 SMALL OUTLINE, R-PSSO-G6
Pin Count 3 3
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature ULTRA LOW RESISTANCE ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 898 mJ 220 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 160 A 160 A
Drain-source On Resistance-Max 0.0021 Ω 0.0019 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263 TO-263
JESD-30 Code R-PSSO-G6 R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 214 W 231 W
Pulsed Drain Current-Max (IDM) 640 A 640 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 2 2

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Compare IPB160N04S4-02D with alternatives