IPB180N04S302ATMA1 vs NP180N04TUJ-E2-AY feature comparison

IPB180N04S302ATMA1 Infineon Technologies AG

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NP180N04TUJ-E2-AY Renesas Electronics Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PSSO-G6 SMALL OUTLINE, R-PSSO-G6
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon Renesas Electronics
Additional Feature ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 1880 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V 40 V
Drain Current-Max (ID) 180 A 180 A
Drain-source On Resistance-Max 0.0015 Ω 0.0015 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263 TO-263
JESD-30 Code R-PSSO-G6 R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 6 6
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 720 A 720 A
Reference Standard AEC-Q101
Surface Mount YES YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code MP-25ZT
Pin Count 7
Manufacturer Package Code PRSS0008DB
Qualification Status Not Qualified
Transistor Application SWITCHING

Compare IPB180N04S302ATMA1 with alternatives

Compare NP180N04TUJ-E2-AY with alternatives