IPI200N15N3GXKSA1
vs
IPP200N15N3GHKSA1
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
TO-262AA
|
|
| Package Description |
IN-LINE, R-PSIP-T3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
|
| Avalanche Energy Rating (Eas) |
170 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
150 V
|
|
| Drain Current-Max (ID) |
50 A
|
|
| Drain-source On Resistance-Max |
0.02 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-262AA
|
|
| JESD-30 Code |
R-PSIP-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
IN-LINE
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Pulsed Drain Current-Max (IDM) |
200 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare IPI200N15N3GXKSA1 with alternatives
Compare IPP200N15N3GHKSA1 with alternatives