IRF5210STRRPBF vs IXTH36P10 feature comparison

IRF5210STRRPBF Infineon Technologies AG

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IXTH36P10 IXYS Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG IXYS CORP
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Factory Lead Time 52 Weeks
Date Of Intro 1996-08-14
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE AVALANCHE RATED
Avalanche Energy Rating (Eas) 120 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 38 A 36 A
Drain-source On Resistance-Max 0.06 Ω 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-247AD
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type P-CHANNEL P-CHANNEL
Power Dissipation-Max (Abs) 170 W 180 W
Pulsed Drain Current-Max (IDM) 140 A 144 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier Matte Tin (Sn)
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes

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