IRF5210STRRPBF
vs
IXTH36P10
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
LITTELFUSE INC
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
52 Weeks
|
|
| Date Of Intro |
1996-08-14
|
|
| Samacsys Manufacturer |
Infineon
|
LITTELFUSE
|
| Additional Feature |
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
|
|
| Avalanche Energy Rating (Eas) |
120 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| DS Breakdown Voltage-Min |
100 V
|
|
| Drain Current-Max (ID) |
38 A
|
|
| Drain-source On Resistance-Max |
0.06 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
|
| JEDEC-95 Code |
TO-263AB
|
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
P-CHANNEL
|
|
| Power Dissipation-Max (Abs) |
170 W
|
|
| Pulsed Drain Current-Max (IDM) |
140 A
|
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
YES
|
|
| Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier
|
Matte Tin (Sn)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
10
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare IRF5210STRRPBF with alternatives
Compare IXTH36P10 with alternatives