IRF640NSTRRPBF vs IRF640NSPBF feature comparison

IRF640NSTRRPBF Infineon Technologies AG

Buy Now Datasheet

IRF640NSPBF Infineon Technologies AG

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 247 mJ 247 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V 200 V
Drain Current-Max (ID) 18 A 18 A
Drain-source On Resistance-Max 0.15 Ω 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 150 W 150 W
Pulsed Drain Current-Max (IDM) 72 A 72 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier MATTE TIN OVER NICKEL
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2

Compare IRF640NSTRRPBF with alternatives

Compare IRF640NSPBF with alternatives