IRF7317
vs
IRF7317PBF
feature comparison
All Stats
Differences Only
Rohs Code
No
Yes
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INTERNATIONAL RECTIFIER CORP
Package Description
SO-8
LEAD FREE, SO-8
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)
100 mJ
100 mJ
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
20 V
Drain Current-Max (ID)
6.6 A
6.6 A
Drain-source On Resistance-Max
0.029 Ω
0.029 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
MS-012AA
JESD-30 Code
R-PDSO-G8
R-PDSO-G8
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
1
Number of Elements
2
2
Number of Terminals
8
8
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
260
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
N-CHANNEL AND P-CHANNEL
Power Dissipation Ambient-Max
2 W
Pulsed Drain Current-Max (IDM)
26 A
26 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Terminal Form
GULL WING
GULL WING
Terminal Position
DUAL
DUAL
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
30
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Pbfree Code
Yes
Part Package Code
SOIC
Pin Count
8
Power Dissipation-Max (Abs)
2 W
Compare IRF7317 with alternatives
Compare IRF7317PBF with alternatives