IXFA20N50P3 vs FMC20N50ES feature comparison

IXFA20N50P3 IXYS Corporation

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FMC20N50ES Fuji Electric Co Ltd

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Rohs Code Yes
Part Life Cycle Code Transferred Not Recommended
Ihs Manufacturer IXYS CORP FUJI ELECTRIC CO LTD
Part Package Code D2PAK
Package Description TO-263AA, 3 PIN SMALL OUTLINE, R-PSSO-G2
Pin Count 4 3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED LOW NOISE
Avalanche Energy Rating (Eas) 300 mJ 582.5 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 20 A 20 A
Drain-source On Resistance-Max 0.3 Ω 0.31 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 380 W 270 W
Pulsed Drain Current-Max (IDM) 40 A 80 A
Surface Mount YES YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Qualification Status Not Qualified

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