IXFA20N50P3
vs
FMC20N50ES
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Transferred
Not Recommended
Ihs Manufacturer
IXYS CORP
FUJI ELECTRIC CO LTD
Part Package Code
D2PAK
Package Description
TO-263AA, 3 PIN
SMALL OUTLINE, R-PSSO-G2
Pin Count
4
3
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
LOW NOISE
Avalanche Energy Rating (Eas)
300 mJ
582.5 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
500 V
Drain Current-Max (ID)
20 A
20 A
Drain-source On Resistance-Max
0.3 Ω
0.31 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
380 W
270 W
Pulsed Drain Current-Max (IDM)
40 A
80 A
Surface Mount
YES
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Qualification Status
Not Qualified
Compare IXFA20N50P3 with alternatives
Compare FMC20N50ES with alternatives