IXFV12N80PS vs IXFA12N80P feature comparison

IXFV12N80PS IXYS Corporation

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IXFA12N80P IXYS Corporation

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Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer IXYS CORP IXYS CORP
Package Description SMALL OUTLINE, R-PSSO-G2 PLASTIC PACKAGE-3
Pin Count 3 3
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 800 mJ 1200 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V 800 V
Drain Current-Max (ID) 12 A 12 A
Drain-source On Resistance-Max 0.85 Ω 1.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e1 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A 36 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish TIN SILVER COPPER Matte Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 2
Part Package Code D2PAK
JEDEC-95 Code TO-263AB
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10

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