IXTT30N50L
vs
IXTH30N50L
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
IXYS CORP
|
LITTELFUSE INC
|
Part Package Code |
TO-268AA
|
|
Package Description |
PLASTIC, TO-268, 3 PIN
|
,
|
Pin Count |
4
|
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
1500 mJ
|
1500 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE WITH BUILT-IN DIODE AND RESISTOR
|
DS Breakdown Voltage-Min |
500 V
|
500 V
|
Drain Current-Max (ID) |
30 A
|
30 A
|
Drain-source On Resistance-Max |
0.2 Ω
|
0.2 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-268AA
|
TO-247AD
|
JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
JESD-609 Code |
e3
|
e3
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
Peak Reflow Temperature (Cel) |
260
|
260
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
60 A
|
60 A
|
Qualification Status |
Not Qualified
|
|
Surface Mount |
YES
|
NO
|
Terminal Finish |
Matte Tin (Sn)
|
Matte Tin (Sn)
|
Terminal Form |
GULL WING
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
10
|
10
|
Transistor Application |
SWITCHING
|
AMPLIFIER
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Samacsys Manufacturer |
|
LITTELFUSE
|
Feedback Cap-Max (Crss) |
|
127 pF
|
Operating Temperature-Min |
|
-55 °C
|
Power Dissipation-Max (Abs) |
|
400 W
|
|
|
|
Compare IXTT30N50L with alternatives
Compare IXTH30N50L with alternatives