JANTXV1N5294 vs 1N5294-1E3 feature comparison

JANTXV1N5294 Cobham PLC

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1N5294-1E3 Microsemi Corporation

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Rohs Code No Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer KNOX SEMICONDUCTORS INC MICROSEMI CORP
Part Package Code DO-7 DO-7
Package Description O-LALF-W2 ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
Pin Count 2 2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.70 8541.10.00.70
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type CURRENT REGULATOR DIODE CURRENT REGULATOR DIODE
Dynamic Impedance-Min 1150000 Ω 1150000 Ω
JEDEC-95 Code DO-7 DO-7
JESD-30 Code O-LALF-W2 O-LALF-W2
JESD-609 Code e0
Knee Impedance-Max 335000 Ω
Limiting Voltage-Max 1.2 V 1.2 V
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Operating Temperature-Min -55 °C -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Power Dissipation-Max 0.5 W 0.5 W
Qualification Status Not Qualified
Reference Standard MIL-19500/463
Regulation Current-Nom (Ireg) 0.75 mA 0.75 mA
Rep Pk Reverse Voltage-Max 100 V 100 V
Surface Mount NO NO
Technology FIELD EFFECT FIELD EFFECT
Terminal Finish TIN LEAD PURE MATTE TIN
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Base Number Matches 6 1
Pbfree Code Yes
Additional Feature METALLURGICALLY BONDED, HIGH SOURCE IMPEDANCE

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