JANTXV1N5539B vs JAN1N5539B feature comparison

JANTXV1N5539B Motorola Semiconductor Products

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JAN1N5539B Knox Semiconductor Inc

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Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer MOTOROLA INC KNOX SEMICONDUCTORS INC
Package Description O-LALF-W2 HERMETIC SEALED, GLASS PACKAGE-2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature LOW NOISE, HIGH RELIABILITY LOW NOISE
Case Connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type ZENER DIODE ZENER DIODE
JEDEC-95 Code DO-7
JESD-30 Code O-LALF-W2 O-LALF-W2
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 200 °C 175 °C
Operating Temperature-Min -65 °C
Package Body Material GLASS GLASS
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.4 W 0.4 W
Qualification Status Not Qualified Not Qualified
Reference Voltage-Nom 19 V 19 V
Reverse Current-Max 0.01 µA 0.01 µA
Surface Mount NO NO
Technology ZENER ZENER
Terminal Form WIRE WIRE
Terminal Position AXIAL AXIAL
Voltage Tol-Max 5% 5%
Working Test Current 1 mA 1 mA
Base Number Matches 1 1
Rohs Code No
Dynamic Impedance-Max 100 Ω
JESD-609 Code e0
Reference Standard MIL-19500/437
Terminal Finish TIN LEAD
Voltage Temp Coeff-Max 16.34 mV/°C

Compare JANTXV1N5539B with alternatives

Compare JAN1N5539B with alternatives