JANTXV1N6135US vs JAN1N6135US feature comparison

JANTXV1N6135US Sensitron Semiconductors

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JAN1N6135US Micross Components

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Part Life Cycle Code Active Active
Ihs Manufacturer SENSITRON SEMICONDUCTOR MICROSS COMPONENTS
Reach Compliance Code compliant unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 160 V 160 V
Case Connection ISOLATED ISOLATED
Clamping Voltage-Max 218.4 V 218.4 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2 O-XELF-N2
Non-rep Peak Rev Power Dis-Max 500 W 500 W
Number of Elements 1 1
Number of Terminals 2 2
Package Body Material GLASS UNSPECIFIED
Package Shape ROUND ROUND
Package Style LONG FORM LONG FORM
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Qualification Status Not Qualified Qualified
Rep Pk Reverse Voltage-Max 121.6 V 121.6 V
Surface Mount YES YES
Technology AVALANCHE ZENER
Terminal Form WRAP AROUND NO LEAD
Terminal Position END END
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
Package Description HERMETIC SEALED, SURFACE MOUNT PACKAGE-2
Breakdown Voltage-Min 144 V
Power Dissipation-Max 1.5 W
Reference Standard MIL-19500/516

Compare JANTXV1N6135US with alternatives

Compare JAN1N6135US with alternatives