LBC856BWT3G
vs
BC856BWR
feature comparison
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
LESHAN RADIO CO LTD
|
CENTRAL SEMICONDUCTOR CORP
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
SMALL OUTLINE, R-PDSO-G3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.1 A
|
0.1 A
|
| Collector-Emitter Voltage-Max |
65 V
|
65 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
220
|
200
|
| JESD-30 Code |
R-PDSO-G3
|
R-PDSO-G3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.15 W
|
0.25 W
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
DUAL
|
DUAL
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
100 MHz
|
200 MHz
|
| Base Number Matches |
1
|
1
|
| Pbfree Code |
|
No
|
| Pin Count |
|
6
|
| HTS Code |
|
8541.21.00.75
|
| Collector-Base Capacitance-Max |
|
4.5 pF
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Min |
|
-65 °C
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Power Dissipation Ambient-Max |
|
0.25 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| VCEsat-Max |
|
0.65 V
|
|
|
|
Compare LBC856BWT3G with alternatives
Compare BC856BWR with alternatives