M29W640GL70NB6E
vs
NAND01GW4B2BV6E
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Obsolete
|
| Ihs Manufacturer |
NUMONYX
|
NUMONYX
|
| Part Package Code |
TSOP
|
SOIC
|
| Package Description |
TSSOP, TSSOP56,.8,20
|
VSSOP,
|
| Pin Count |
56
|
48
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.51
|
8542.32.00.51
|
| Access Time-Max |
70 ns
|
25000 ns
|
| Additional Feature |
TOP BOOT BLOCK
|
|
| Alternate Memory Width |
8
|
|
| Boot Block |
TOP
|
|
| Command User Interface |
YES
|
|
| Common Flash Interface |
YES
|
|
| Data Polling |
YES
|
|
| JESD-30 Code |
R-PDSO-G56
|
R-PDSO-G48
|
| Length |
18.4 mm
|
15.4 mm
|
| Memory Density |
67108864 bit
|
1073741824 bit
|
| Memory IC Type |
FLASH
|
FLASH
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Sectors/Size |
128
|
|
| Number of Terminals |
56
|
48
|
| Number of Words |
4194304 words
|
67108864 words
|
| Number of Words Code |
4000000
|
64000000
|
| Operating Mode |
ASYNCHRONOUS
|
ASYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
85 °C
|
| Operating Temperature-Min |
-40 °C
|
-40 °C
|
| Organization |
4MX16
|
64MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TSSOP
|
VSSOP
|
| Package Equivalence Code |
TSSOP56,.8,20
|
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
|
SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH
|
| Page Size |
4/8 words
|
|
| Parallel/Serial |
PARALLEL
|
PARALLEL
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Programming Voltage |
3 V
|
3 V
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Ready/Busy |
YES
|
|
| Seated Height-Max |
1.2 mm
|
0.65 mm
|
| Sector Size |
64K
|
|
| Standby Current-Max |
0.0001 A
|
|
| Supply Current-Max |
0.01 mA
|
0.03 mA
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
2.7 V
|
2.7 V
|
| Supply Voltage-Nom (Vsup) |
3 V
|
3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
INDUSTRIAL
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Pitch |
0.5 mm
|
0.5 mm
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Toggle Bit |
YES
|
|
| Type |
NOR TYPE
|
NAND TYPE
|
| Width |
14 mm
|
12 mm
|
| Base Number Matches |
3
|
2
|
|
|
|
Compare M29W640GL70NB6E with alternatives
Compare NAND01GW4B2BV6E with alternatives