MASMLG40AE3 vs MASMLG40AE3 feature comparison

MASMLG40AE3 Microchip Technology Inc

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MASMLG40AE3 Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Active Transferred
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROSEMI CORP
Reach Compliance Code compliant compliant
Factory Lead Time 40 Weeks
Additional Feature HIGH RELIABILITY HIGH RELIABILITY
Breakdown Voltage-Max 49.1 V 49.1 V
Breakdown Voltage-Min 44.4 V 44.4 V
Breakdown Voltage-Nom 46.75 V 46.75 V
Clamping Voltage-Max 64.5 V 64.5 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-215AB DO-215AB
JESD-30 Code R-PDSO-G2 R-PDSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 3000 W 3000 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W 1.61 W
Qualification Status Not Qualified Not Qualified
Reference Standard IEC-61000-4-2, 4-4, 4-5; MIL-19500 IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max 40 V 40 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Base Number Matches 1 3
Pbfree Code Yes
Part Package Code DO-215AB
Pin Count 2
ECCN Code EAR99
HTS Code 8541.10.00.50