MMBT2907A
vs
MMBT2907A-HIGH
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
NATIONAL SEMICONDUCTOR CORP
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Collector Current-Max (IC) |
0.6 A
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
50
|
50
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Power Dissipation-Max (Abs) |
0.225 W
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Transition Frequency-Nom (fT) |
200 MHz
|
200 MHz
|
| Base Number Matches |
2
|
1
|
| Package Description |
|
SMALL OUTLINE, R-PDSO-G3
|
| HTS Code |
|
8541.21.00.75
|
| Collector-Base Capacitance-Max |
|
8 pF
|
| Collector-Emitter Voltage-Max |
|
60 V
|
| JEDEC-95 Code |
|
TO-236AA
|
| JESD-30 Code |
|
R-PDSO-G3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
PLASTIC/EPOXY
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
SMALL OUTLINE
|
| Power Dissipation Ambient-Max |
|
0.35 W
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
GULL WING
|
| Terminal Position |
|
DUAL
|
| Transistor Application |
|
AMPLIFIER
|
| Transistor Element Material |
|
SILICON
|
| Turn-off Time-Max (toff) |
|
100 ns
|
| Turn-on Time-Max (ton) |
|
45 ns
|
| VCEsat-Max |
|
1.6 V
|
|
|
|
Compare MMBT2907A with alternatives
Compare MMBT2907A-HIGH with alternatives