MMBZ12VALFHT116 vs MMBZ12CA feature comparison

MMBZ12VALFHT116 ROHM Semiconductor

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MMBZ12CA Diotec Semiconductor AG

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Rohs Code Yes Yes
Part Life Cycle Code Not Recommended Active
Ihs Manufacturer ROHM CO LTD DIOTEC SEMICONDUCTOR AG
Package Description R-PDSO-G3 R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Samacsys Manufacturer ROHM Semiconductor
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Max 12.6 V 12.6 V
Breakdown Voltage-Min 11.4 V 11.4 V
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code R-PDSO-G3 R-PDSO-G3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 40 W 40 W
Number of Elements 2 2
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 0.225 W 0.225 W
Reference Standard AEC-Q101; IEC-61000-4-2 IEC-61000-4-2
Rep Pk Reverse Voltage-Max 8.5 V 8.5 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 10 NOT SPECIFIED
Base Number Matches 1 1
Date Of Intro 2017-02-03
JEDEC-95 Code TO-236
Operating Temperature-Min -50 °C

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