MSMBJ11A/TR vs SMBJ11A feature comparison

MSMBJ11A/TR Microchip Technology Inc

Buy Now Datasheet

SMBJ11A Taiwan Semiconductor

Buy Now Datasheet
Rohs Code No Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC TAIWAN SEMICONDUCTOR CO LTD
Package Description PLASTIC, SMBJ, 2 PIN SMB, 2 PIN
Reach Compliance Code compliant not_compliant
Additional Feature HIGH RELIABILITY EXCELLENT CLAMPING CAPABILITY
Breakdown Voltage-Max 13.5 V 13.5 V
Breakdown Voltage-Min 12.2 V 12.2 V
Breakdown Voltage-Nom 12.85 V 12.85 V
Clamping Voltage-Max 18.2 V 18.2 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-J2 R-PDSO-C2
JESD-609 Code e0 e3
Moisture Sensitivity Level 1 1
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -55 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.38 W 3 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 11 V 11 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Finish TIN LEAD MATTE TIN
Terminal Form J BEND C BEND
Terminal Position DUAL DUAL
Base Number Matches 1 14
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Taiwan Semiconductor
Forward Voltage-Max (VF) 3.5 V
Peak Reflow Temperature (Cel) 260
Reverse Current-Max 1 µA
Reverse Test Voltage 11 V
Time@Peak Reflow Temperature-Max (s) 30

Compare MSMBJ11A/TR with alternatives

Compare SMBJ11A with alternatives