MTB23P06V vs NTB30N06LT4G feature comparison

MTB23P06V Motorola Mobility LLC

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NTB30N06LT4G onsemi

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Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer MOTOROLA INC ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2 LEAD FREE, CASE 418B-04, D2PAK-3
Reach Compliance Code unknown not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 794 mJ 101 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 23 A 30 A
Drain-source On Resistance-Max 0.12 Ω 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 210 pF
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e0 e3
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 90 W
Power Dissipation-Max (Abs) 90 W 88.2 W
Pulsed Drain Current-Max (IDM) 81 A 90 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) Tin (Sn)
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Turn-off Time-Max (toff) 200 ns
Turn-on Time-Max (ton) 230 ns
Base Number Matches 4 1
Pbfree Code Yes
Part Package Code D2PAK 2 LEAD
Pin Count 3
Manufacturer Package Code 418B-04
Samacsys Manufacturer onsemi
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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Compare NTB30N06LT4G with alternatives