MXPLAD30KP90CAE3/TR vs MXRT100KP90CAE3 feature comparison

MXPLAD30KP90CAE3/TR Microchip Technology Inc

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MXRT100KP90CAE3 Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description S-PSSO-G1 ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code compliant compliant
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Max 111 V 111 V
Breakdown Voltage-Min 100 V 100 V
Breakdown Voltage-Nom 105.5 V
Clamping Voltage-Max 146 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code S-PSSO-G1 O-PALF-W2
JESD-609 Code e3 e3
Non-rep Peak Rev Power Dis-Max 30000 W 100000 W
Number of Elements 1 1
Number of Terminals 1 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape SQUARE ROUND
Package Style SMALL OUTLINE LONG FORM
Polarity BIDIRECTIONAL BIDIRECTIONAL
Power Dissipation-Max 2.5 W 1.61 W
Qualification Status Not Qualified Not Qualified
Rep Pk Reverse Voltage-Max 90 V 90 V
Surface Mount YES NO
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form GULL WING WIRE
Terminal Position SINGLE AXIAL
Base Number Matches 1 1
Case Connection ISOLATED
Moisture Sensitivity Level 1
Reference Standard MIL-19500

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