MXRT100KP90AE3 vs MXPLAD30KP90AE3/TR feature comparison

MXRT100KP90AE3 Microchip Technology Inc

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MXPLAD30KP90AE3/TR Microchip Technology Inc

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Rohs Code Yes Yes
Part Life Cycle Code Active Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC MICROCHIP TECHNOLOGY INC
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-2 S-PSSO-G1
Reach Compliance Code compliant compliant
Breakdown Voltage-Max 111 V 111 V
Breakdown Voltage-Min 100 V 100 V
Case Connection ISOLATED
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2 S-PSSO-G1
JESD-609 Code e3 e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 100000 W 30000 W
Number of Elements 1 1
Number of Terminals 2 1
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape ROUND SQUARE
Package Style LONG FORM SMALL OUTLINE
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 1.61 W 2.5 W
Qualification Status Not Qualified Not Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 90 V 90 V
Surface Mount NO YES
Technology AVALANCHE AVALANCHE
Terminal Finish MATTE TIN MATTE TIN
Terminal Form WIRE GULL WING
Terminal Position AXIAL SINGLE
Base Number Matches 1 1
ECCN Code EAR99
HTS Code 8541.10.00.50
Breakdown Voltage-Nom 105.5 V
Clamping Voltage-Max 146 V

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