NP40N10VDF-E1-AY
vs
2SK3646-01SJ
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
RENESAS ELECTRONICS CORP
|
FUJI ELECTRIC CO LTD
|
| Part Package Code |
MP-3ZP
|
|
| Package Description |
LEAD FREE, MP-3ZP, 3 PIN
|
SMALL OUTLINE, R-PSSO-G2
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
PRSS0004ZP
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
|
| Samacsys Manufacturer |
Renesas Electronics
|
|
| Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
| Avalanche Energy Rating (Eas) |
61 mJ
|
204.7 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
40 A
|
41 A
|
| Drain-source On Resistance-Max |
0.037 Ω
|
0.044 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-252
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
175 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
1.2 W
|
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
164 A
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare NP40N10VDF-E1-AY with alternatives
Compare 2SK3646-01SJ with alternatives