NTB18N06LT4
vs
NTB18N06T4
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
ON SEMICONDUCTOR
|
ROCHESTER ELECTRONICS LLC
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
CASE 418AA-01, D2PAK-3
|
Pin Count |
3
|
3
|
Manufacturer Package Code |
CASE 418AA-01
|
CASE 418AA-01
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Additional Feature |
LOGIC LEVEL COMPATIBLE
|
|
Avalanche Energy Rating (Eas) |
61 mJ
|
61 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
60 V
|
60 V
|
Drain Current-Max (ID) |
15 A
|
15 A
|
Drain-source On Resistance-Max |
0.1 Ω
|
0.09 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
235
|
240
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
48.4 W
|
|
Pulsed Drain Current-Max (IDM) |
45 A
|
45 A
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
TIN LEAD
|
TIN LEAD
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
Pbfree Code |
|
No
|
Moisture Sensitivity Level |
|
1
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
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