NTB25P06G vs NVB25P06T4G feature comparison

NTB25P06G onsemi

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NVB25P06T4G onsemi

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Rohs Code Yes
Part Life Cycle Code Obsolete End Of Life
Ihs Manufacturer ON SEMICONDUCTOR ON SEMICONDUCTOR
Package Description LEAD FREE, CASE 418B-04, D2PAK-3 D2PAK-3/2
Pin Count 3 3
Manufacturer Package Code CASE 418B-04 418B-04
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.95
Avalanche Energy Rating (Eas) 600 mJ 600 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V 60 V
Drain Current-Max (ID) 27.5 A 27.5 A
Drain-source On Resistance-Max 0.082 Ω 0.082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 120 W
Pulsed Drain Current-Max (IDM) 80 A 80 A
Qualification Status Not Qualified
Surface Mount YES YES
Terminal Finish Tin (Sn) Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code Yes
Part Package Code D2PAK 2 LEAD
Samacsys Manufacturer onsemi
Reference Standard AEC-Q101
Time@Peak Reflow Temperature-Max (s) 30

Compare NTB25P06G with alternatives

Compare NVB25P06T4G with alternatives