NTB30N06G
vs
MTB23P06V
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
Yes
|
No
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
ROCHESTER ELECTRONICS LLC
|
MOTOROLA SEMICONDUCTOR PRODUCTS
|
| Package Description |
LEAD FREE, CASE 418B-04, D2PAK-3
|
,
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
CASE 418B-04
|
|
| Reach Compliance Code |
unknown
|
unknown
|
| Avalanche Energy Rating (Eas) |
101 mJ
|
|
| Case Connection |
DRAIN
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
Single
|
| DS Breakdown Voltage-Min |
60 V
|
|
| Drain Current-Max (ID) |
27 A
|
|
| Drain-source On Resistance-Max |
0.042 Ω
|
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
2
|
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
80 A
|
|
| Qualification Status |
COMMERCIAL
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
|
| Base Number Matches |
2
|
4
|
| Drain Current-Max (Abs) (ID) |
|
23 A
|
| Operating Temperature-Max |
|
175 °C
|
| Power Dissipation-Max (Abs) |
|
90 W
|
|
|
|
Compare NTB30N06G with alternatives