NTB45N06G
vs
MTB50N06ET4
feature comparison
All Stats
Differences Only
Pbfree Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
ON SEMICONDUCTOR
MOTOROLA SEMICONDUCTOR PRODUCTS
Part Package Code
D2PAK 2 LEAD
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Manufacturer Package Code
418B-04
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Samacsys Manufacturer
onsemi
Avalanche Energy Rating (Eas)
240 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Single
DS Breakdown Voltage-Min
60 V
60 V
Drain Current-Max (ID)
45 A
50 A
Drain-source On Resistance-Max
0.026 Ω
0.025 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e3
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
125 W
2.5 W
Pulsed Drain Current-Max (IDM)
150 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
Tin (Sn)
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Rohs Code
Drain Current-Max (Abs) (ID)
50 A
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